Item Name | Semiconductor Device Diode |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
National Item Identification Number (NIIN) | 00-761-3857 (007613857) |
NCB Code | USA (00) |
Manufacturer | Northrop Grumman Systems Corporation, Bae Systems Inc, Fibre Productsision Of Ikelheimer Ernst Inc, Airbus Defence And Space Limited, Raytheon Company, Military Specifications, Cobham Advanced Electronic Solutions Inc, Joint Army-Navy Specifications, Micrometrics Inc, Semi General Inc |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
019-005893-001 | northrop grumman systems corporation | semiconductor device diode | 26916 | RFQ |
1047634P1 | bae systems inc | semiconductor device diode | 94117 | RFQ |
1N830 | fibre productsision of ikelheimer ernst inc | semiconductor device diode | 93321 | RFQ |
5800583-926200.111 | airbus defence and space limited | semiconductor device diode | c0426 | RFQ |
617952-1 | raytheon company | semiconductor device diode | 37695 | RFQ |
JAN1N830A | military specifications | semiconductor device diode | 81349 | RFQ |
MA41431 | cobham advanced electronic solutions inc | semiconductor device diode | 96341 | RFQ |
MIL-S-19500/229 | military specifications | semiconductor device diode | 81349 | RFQ |
USN1N830AM | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
UXAN1N830A | micrometrics inc | semiconductor device diode | 0eff4 | RFQ |
UXAN1N830A | semi general inc | semiconductor device diode | 3bby6 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/229 GOVERNMENT SPECIFICATION |
ADAV | OVERALL DIAMETER | 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS |
CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
Components Related to NSN - 5961-00-761-3857, 5961007613857 | ||||
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5998-01-289-0549 (5998012890549) | 5962-00-274-2396 (5962002742396) | 5962-01-093-6792 (5962010936792) | 5930-01-169-8149 (5930011698149) | |
5940-01-042-9428 (5940010429428) | 5910-01-624-2225 (5910016242225) | 5998-01-456-1741 (5998014561741) | 5935-00-020-7903 (5935000207903) | |
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