| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-688-6316 (006886316) |
| NCB Code | USA (00) |
| Manufacturer | Northrop Grumman Systems Corporation, Trio Laboratories Inc, Lockheed Martin Corporation, Freescale Semiconductor Inc, Military Specifications, St Semicon Inc, Electronic Industries Inc, Ward Leonard Electric Company Inc, Rca Corp, Solitron Devices Inc, Semicon Components Inc, Gilbert Engineering Co Inc, Joint Army-Navy Specifications, General Electric Company, J S Japanese Industrial, Thales Nederland Bv, Infineon Technologies, Raytheon Company, Inspektorat Wsparcia Sil Zbrojnych, Hamilton Sundstrand Corporation, General Semiconductor Inc, Dla Land And Maritime |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 075040500 00 | northrop grumman systems corporation | semiconductor device diode | 03956 | RFQ |
| 11856-21 | trio laboratories inc | semiconductor device diode | 00638 | RFQ |
| 11856-23 | trio laboratories inc | semiconductor device diode | 00638 | RFQ |
| 1654043-1REVA | lockheed martin corporation | semiconductor device diode | 56232 | RFQ |
| 1N1256 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 1N1492 | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N2482 | st semicon inc | semiconductor device diode | 51589 | RFQ |
| 1N2484 | st semicon inc | semiconductor device diode | 51589 | RFQ |
| 1N2863 | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N547 | ward leonard electric company inc | semiconductor device diode | 63743 | RFQ |
| 1N547 | rca corp | semiconductor device diode | 54590 | RFQ |
| 1N547 | solitron devices inc | semiconductor device diode | 21845 | RFQ |
| 1N547 | semicon components inc | semiconductor device diode | 11961 | RFQ |
| 1N547 | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
| 1N547 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| 1N5474 | general electric company | semiconductor device diode | 09214 | RFQ |
| 1N547M | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N547W | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N574M | military specifications | semiconductor device diode | 81349 | RFQ |
| 1S1943 | j s japanese industrial | semiconductor device diode | s3893 | RFQ |
| 352250009904 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| 3HS1 | infineon technologies | semiconductor device diode | 81483 | RFQ |
| 4178600-208 | raytheon company | semiconductor device diode | 05869 | RFQ |
| 5961PL0805261 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 903916C1 | hamilton sundstrand corporation | semiconductor device diode | 55820 | RFQ |
| IN1696 | general semiconductor inc | semiconductor device diode | 14936 | RFQ |
| JAN1N547 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N547 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| JAN1N547 | semicon components inc | semiconductor device diode | 11961 | RFQ |
| JAN1N547M | military specifications | semiconductor device diode | 81349 | RFQ |
| L02201 | dla land and maritime | semiconductor device diode | 16236 | RFQ |
| MIL-S-19500/202 | military specifications | semiconductor device diode | 81349 | RFQ |
| MILS19500E1-202AJAN1 | military specifications | semiconductor device diode | 81349 | RFQ |
| VBE890-1N547 | thales nederland bv | semiconductor device diode | h0203 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.800 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.310 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 720.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS AND 420.0 MAXIMUM REVERSE VOLTAGE,TOTAL RMS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 750.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/202 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-00-688-6316, 5961006886316 | ||||
| 5999-01-481-1051 (5999014811051) | 5995-01-569-3777 (5995015693777) | 5998-00-302-2814 (5998003022814) | 5930-00-422-0534 (5930004220534) | |
| 5998-01-289-0549 (5998012890549) | 5962-00-274-2396 (5962002742396) | 5962-01-093-6792 (5962010936792) | 5930-01-169-8149 (5930011698149) | |
| 5940-01-042-9428 (5940010429428) | 5910-01-624-2225 (5910016242225) | 5998-01-456-1741 (5998014561741) | 5935-00-020-7903 (5935000207903) | |
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