| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-425-3709 (004253709) |
| NCB Code | USA (00) |
| Manufacturer | Gte Communication Systems Corp, Freescale Semiconductor Inc, Joint Army-Navy Specifications, Lockheed Martin Corporation, Inspektorat Wsparcia Sil Zbrojnych, Military Specifications |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 174-27440-07 | gte communication systems corp | semiconductor device diode | 04773 | RFQ |
| 1N28108 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 1N2810B | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| 436048 | lockheed martin corporation | semiconductor device diode | 56232 | RFQ |
| 5961PL1257684 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| JAN1N2810B | military specifications | semiconductor device diode | 81349 | RFQ |
| JANIN2810B | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N28108 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N2810B | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/114 | military specifications | semiconductor device diode | 81349 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.6 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3970.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS CASE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/114 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-00-425-3709, 5961004253709 | ||||
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| 5998-01-289-0549 (5998012890549) | 5962-00-274-2396 (5962002742396) | 5962-01-093-6792 (5962010936792) | 5930-01-169-8149 (5930011698149) | |
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