| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 10129866 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 12448 34803 | diodes zetex semiconductors limited | semiconductor device diode | k1196 | RFQ |
| 16100-011 | dynalec corporation | semiconductor device diode | 12763 | RFQ |
| 16101-038 | dynalec corporation | semiconductor device diode | 12763 | RFQ |
| 16101-052 | dynalec corporation | semiconductor device diode | 12763 | RFQ |
| 185-0040 | science applications international corporation | semiconductor device diode | 79343 | RFQ |
| 1978209FN4 | northrop grumman systems corporation | semiconductor device diode | 03956 | RFQ |
| 1N2613 | westinghouse electric corp | semiconductor device diode | 05277 | RFQ |
| 1N2613 | general dynamics mission systems | semiconductor device diode | 1vpw8 | RFQ |
| 1N3079 | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
| 1N4142 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| 1N5551 | semtech corporation | semiconductor device diode | 14099 | RFQ |
| 1N5551 | general semiconductor inc | semiconductor device diode | 14936 | RFQ |
| 353-3296-00 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 353-3296-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 353-9009-391 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 353-9019-020 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 3SE4 | semtech corporation | semiconductor device diode | 14099 | RFQ |
| 3SM4 | semcor inc | semiconductor device diode | 28976 | RFQ |
| 4178600-565 | raytheon company | semiconductor device diode | 05869 | RFQ |
| 5961PL0190241 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 76-11244 | department of defense project | semiconductor device diode | 30554 | RFQ |
| 7904865-01 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
| 7904865-03 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
| 8-711113-079 | safran electrical and power | semiconductor device diode | f0217 | RFQ |
| 848189-0001 | thales defense and security inc | semiconductor device diode | 65597 | RFQ |
| CER300 | solitron devices inc | semiconductor device diode | 21845 | RFQ |
| IN5200 | semtech corporation | semiconductor device diode | 14099 | RFQ |
| JAN1N3190 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N5551 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N5551 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| JANTX1N3190 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N5551 | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N5551A | lacon electronic gmbh | semiconductor device diode | d6528 | RFQ |
| JANTX1N5551A | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
| JANTXIN5551 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/420 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/155 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/420 | military specifications | semiconductor device diode | 81349 | RFQ |
| QPL-JANTX1N5551 | military specifications | semiconductor device diode | 81349 | RFQ |
| Z1442 | united states department of the army | semiconductor device diode | 12255 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.115 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | MULTIPLE LAUNCH ROCKET SYSTEM (MLRS) |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 460.0 MINIMUM BREAKDOWN VOLTAGE,DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| Components Related to NSN - 5961-00-416-4858, 5961004164858 | ||||
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| 5935-01-666-2975 (5935016662975) | 5999-00-007-4421 (5999000074421) | 5920-01-109-9598 (5920011099598) | 5962-01-249-4973 (5962012494973) | |
| 5925-01-672-5538 (5925016725538) | 5950-00-052-7858 (5950000527858) | 5998-01-542-6842 (5998015426842) | 5962-00-033-3313 (5962000333313) | |
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