Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
10129866 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
12448 34803 | diodes zetex semiconductors limited | semiconductor device diode | k1196 | RFQ |
16100-011 | dynalec corporation | semiconductor device diode | 12763 | RFQ |
16101-038 | dynalec corporation | semiconductor device diode | 12763 | RFQ |
16101-052 | dynalec corporation | semiconductor device diode | 12763 | RFQ |
185-0040 | science applications international corporation | semiconductor device diode | 79343 | RFQ |
1978209FN4 | northrop grumman systems corporation | semiconductor device diode | 03956 | RFQ |
1N2613 | westinghouse electric corp | semiconductor device diode | 05277 | RFQ |
1N2613 | general dynamics mission systems | semiconductor device diode | 1vpw8 | RFQ |
1N3079 | gilbert engineering co inc | semiconductor device diode | 03877 | RFQ |
1N4142 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
1N5551 | semtech corporation | semiconductor device diode | 14099 | RFQ |
1N5551 | general semiconductor inc | semiconductor device diode | 14936 | RFQ |
353-3296-00 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
353-3296-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
353-9009-391 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
353-9019-020 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
3SE4 | semtech corporation | semiconductor device diode | 14099 | RFQ |
3SM4 | semcor inc | semiconductor device diode | 28976 | RFQ |
4178600-565 | raytheon company | semiconductor device diode | 05869 | RFQ |
5961PL0190241 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
76-11244 | department of defense project | semiconductor device diode | 30554 | RFQ |
7904865-01 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
7904865-03 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
8-711113-079 | safran electrical and power | semiconductor device diode | f0217 | RFQ |
848189-0001 | thales defense and security inc | semiconductor device diode | 65597 | RFQ |
CER300 | solitron devices inc | semiconductor device diode | 21845 | RFQ |
IN5200 | semtech corporation | semiconductor device diode | 14099 | RFQ |
JAN1N3190 | military specifications | semiconductor device diode | 81349 | RFQ |
JAN1N5551 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
JAN1N5551 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N3190 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N5551 | military specifications | semiconductor device diode | 81349 | RFQ |
JANTX1N5551A | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
JANTX1N5551A | lacon electronic gmbh | semiconductor device diode | d6528 | RFQ |
JANTXIN5551 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-PRF-19500/420 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/155 | military specifications | semiconductor device diode | 81349 | RFQ |
MIL-S-19500/420 | military specifications | semiconductor device diode | 81349 | RFQ |
QPL-JANTX1N5551 | military specifications | semiconductor device diode | 81349 | RFQ |
Z1442 | united states department of the army | semiconductor device diode | 12255 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.115 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
AGAV | END ITEM IDENTIFICATION | MULTIPLE LAUNCH ROCKET SYSTEM (MLRS) |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 460.0 MINIMUM BREAKDOWN VOLTAGE,DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
MATT | MATERIAL | GLASS INCLOSURE |
MATT | MATERIAL | SILICON SEMICONDUCTOR |
TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
Components Related to NSN - 5961-00-416-4858, 5961004164858 | ||||
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5990-01-114-9896 (5990011149896) | 5925-01-198-7912 (5925011987912) | 5995-01-152-5092 (5995011525092) | 5910-00-989-4896 (5910009894896) | |
5961-00-172-8326 (5961001728326) | 5950-00-971-5673 (5950009715673) | 5925-00-235-0046 (5925002350046) | 5962-01-421-9559 (5962014219559) | |
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