| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-404-9136 (004049136) |
| NCB Code | USA (00) |
| Manufacturer | Nimikkeistokeskus Ncb Finland, Military Specifications, Texas Instruments Inc, S T C Telecommunications Ltd, Qes Ltd, Interstate Electronics Corporation, Rockwell Collins Aerospace, Meggitt Training Systems Inc, Ge Aviation Systems Ltd, Selex Es Limited, Inspektorat Wsparcia Sil Zbrojnych, Thales Defense And Security Inc, Thales Sa, Alenia Sistemi Difesa Spa, Leonardo Spa Airborne And Space, Leonardo Spa Aircraft Division, Microsemi Corporation, Adelco Elektronik Gmbh, Freescale Semiconductor Inc, Epcos Ag, Semtech Corporation, Mbda Incorporated |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 10133074 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | RFQ |
| 1N5615 | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N5615 | texas instruments inc | semiconductor device diode | d2336 | RFQ |
| 25CSD13007C00 | s t c telecommunications ltd | semiconductor device diode | k2193 | RFQ |
| 317221A | qes ltd | semiconductor device diode | ka042 | RFQ |
| 343-213-048 | interstate electronics corporation | semiconductor device diode | 07421 | RFQ |
| 353-6496-020 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 353-9009-520 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 40-666-2301U | meggitt training systems inc | semiconductor device diode | k0802 | RFQ |
| 48-103-0001 | ge aviation systems ltd | semiconductor device diode | k5294 | RFQ |
| 564715 | selex es limited | semiconductor device diode | d0327 | RFQ |
| 5961PL0190230 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| 6L.5532.527.00-561393 | selex es limited | semiconductor device diode | d0327 | RFQ |
| 848216-0001 | thales defense and security inc | semiconductor device diode | 65597 | RFQ |
| 91355675 | thales sa | semiconductor device diode | f6481 | RFQ |
| 941-0402-0601 | alenia sistemi difesa spa | semiconductor device diode | a0307 | RFQ |
| 941-0402-0601 | leonardo spa airborne and space | semiconductor device diode | a0810 | RFQ |
| 941-0402-0601 | leonardo spa aircraft division | semiconductor device diode | a0019 | RFQ |
| 99114664 | thales sa | semiconductor device diode | f6481 | RFQ |
| IN5615 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N5615 | microsemi corporation | semiconductor device diode | 14552 | RFQ |
| JAN1N5615 | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N5615A | adelco elektronik gmbh | semiconductor device diode | c7191 | RFQ |
| MIL-PRF-19500/429 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-S-19500/429 | military specifications | semiconductor device diode | 81349 | RFQ |
| MR832 | freescale semiconductor inc | semiconductor device diode | 04713 | RFQ |
| Q62702-A493-Z | epcos ag | semiconductor device diode | d1180 | RFQ |
| SC5615 | semtech corporation | semiconductor device diode | 14099 | RFQ |
| VG95212 T3-JAN 1N5615 | selex es limited | semiconductor device diode | d0327 | RFQ |
| X01137 | mbda incorporated | semiconductor device diode | k0967 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/429 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-00-404-9136, 5961004049136 | ||||
| 5999-01-481-1051 (5999014811051) | 5995-01-569-3777 (5995015693777) | 5998-00-302-2814 (5998003022814) | 5930-00-422-0534 (5930004220534) | |
| 5998-01-289-0549 (5998012890549) | 5962-00-274-2396 (5962002742396) | 5962-01-093-6792 (5962010936792) | 5930-01-169-8149 (5930011698149) | |
| 5940-01-042-9428 (5940010429428) | 5910-01-624-2225 (5910016242225) | 5998-01-456-1741 (5998014561741) | 5935-00-020-7903 (5935000207903) | |
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