| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-005-2918 (000052918) |
| NCB Code | USA (00) |
| Manufacturer | Basler Electric Company, Systron Donner Corp, Telemechanics Inc, At And T Corp, Lucent Technologies Inc, Infineon Technologies, Electronic Industries Inc, Military Specifications, Solitron Devices Inc, Military Standards Corp, Joint Army-Navy Specifications, General Electric Company, Westinghouse Electric Corp, Peco Inc, Rockwell Collins Aerospace, Rca Corp, Interstate Electronics Corporation, General Instrument Corporation, Harris Corporation, Northrop Grumman Systems Corporation |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| 06358 | basler electric company | semiconductor device diode | 97520 | RFQ |
| 100424 | systron donner corp | semiconductor device diode | 52542 | RFQ |
| 171612 | telemechanics inc | semiconductor device diode | 57712 | RFQ |
| 171612 | at and t corp | semiconductor device diode | 70408 | RFQ |
| 171612 | lucent technologies inc | semiconductor device diode | 3b4m0 | RFQ |
| 1N1200R | infineon technologies | semiconductor device diode | 81483 | RFQ |
| 1N1200RA | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| 1N1202 | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N1202AR | solitron devices inc | semiconductor device diode | 21845 | RFQ |
| 1N1202AR | military standards corp | semiconductor device diode | 96906 | RFQ |
| 1N1202R | military specifications | semiconductor device diode | 81349 | RFQ |
| 1N1202R | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| 1N1202RA | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| 1N1342RA | general electric company | semiconductor device diode | 24446 | RFQ |
| 1N1344AR | westinghouse electric corp | semiconductor device diode | 05277 | RFQ |
| 3371406 | peco inc | semiconductor device diode | 0n3l5 | RFQ |
| 353-6213-000 | rockwell collins aerospace | semiconductor device diode | 13499 | RFQ |
| 353-6352-000 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 40108R | rca corp | semiconductor device diode | 54590 | RFQ |
| 499-025-036 | interstate electronics corporation | semiconductor device diode | 07421 | RFQ |
| 66-9095 | infineon technologies | semiconductor device diode | 81483 | RFQ |
| AG1012R | general instrument corporation | semiconductor device diode | 72699 | RFQ |
| CR-0402 | harris corporation | semiconductor device diode | 14304 | RFQ |
| JAN1N1202AR | military specifications | semiconductor device diode | 81349 | RFQ |
| JAN1N1202RA | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| JANTX1202RA | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N1202AR | military specifications | semiconductor device diode | 81349 | RFQ |
| JANTX1N1202RA | military specifications | semiconductor device diode | 81349 | RFQ |
| JEDEC1N1202A | electronic industries inc | semiconductor device diode | 80131 | RFQ |
| MIL-PRF-19500/260 | military specifications | semiconductor device diode | 81349 | RFQ |
| PL1885739 IT. 27 | northrop grumman systems corporation | semiconductor device diode | 03956 | RFQ |
| PLI885769 IT. 13 | northrop grumman systems corporation | semiconductor device diode | 03956 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 240.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 240.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 12.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB,SOLDER LUG AND 1 THREADED STUD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/260 GOVERNMENT SPECIFICATION |
| Components Related to NSN - 5961-00-005-2918, 5961000052918 | ||||
| 5985-01-686-6534 (5985016866534) | 5962-00-351-7969 (5962003517969) | 5998-01-318-3501 (5998013183501) | 5995-00-239-6005 (5995002396005) | |
| 5935-01-666-2975 (5935016662975) | 5999-00-007-4421 (5999000074421) | 5920-01-109-9598 (5920011099598) | 5962-01-249-4973 (5962012494973) | |
| 5925-01-672-5538 (5925016725538) | 5950-00-052-7858 (5950000527858) | 5998-01-542-6842 (5998015426842) | 5962-00-033-3313 (5962000333313) | |
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